Method of transferring micro-light emitting diode for led display

ABSTRACT

A method of transferring a micro light emitting diode (LED) to a pixel array panel includes transferring the micro LED by spraying using an inkjet method, wherein the micro LED comprises an active layer comprising a first portion emitting light in a first direction and a second portion emitting the light in a second direction different from the first direction.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.17/090,077, filed Nov. 5, 2020, which is based on and claims the benefitof U.S. Provisional Patent Application No. 62/930,880, filed on Nov. 5,2019, and is also based on and claims priority under 35 U.S.C. § 119 toKorean Patent Application No. 10-2020-0042411, filed on Apr. 7, 2020, inthe Korean Intellectual Property Office, the disclosures of which areincorporated by reference herein in their entireties.

BACKGROUND 1. Field

The disclosure relates to display manufacturing, and more particularly,to methods of transferring a micro light emitting diode (LED) used as apixel light source in a process of manufacturing an LED display.

2. Description of Related Art

In the past, liquid crystal displays (LCD) have been used for flat paneldisplays, however, as use of organic light emitting diodes (OLED) thatdo not use a liquid crystal has become widespread, supply of LCDs hasdecreased significantly. Recently, a light emitting diode (LED) displaythat directly uses a micro LED as a light source of each pixel has beenintroduced as a next-generation display. In the LED display, each pixelincludes a micro LED (R micro LED) emitting red light, a micro LED (Gmicro LED) emitting green light, and a micro LED (B micro LED) emittingblue light to a sub-pixel region emitting red light R, a sub-pixelregion emitting green light G, and a sub-pixel region emitting bluelight B, respectively. Such a micro LED may be transferred to a pixelarray panel through a transfer process.

SUMMARY

According to embodiments, there are provided methods of transferringmicro LEDs in an LED display, whereby the micro LED transfer efficiencyis increased.

According to embodiments, there are provided methods of quickly andaccurately transferring micro LEDs in an LED display having alarge-region pixel array panel.

Additional aspects will be set forth in part in the description whichfollows and, in part, will be apparent from the description, or may belearned by practice of embodiments of the disclosure.

In accordance with an aspect of the disclosure, a method of transferringat least one micro light emitting diode (LED) to a pixel array panelincluding a plurality of sub-pixel regions on which the at least onemicro LED is to be mounted, includes transferring the at least one microLED by spraying using an inkjet method, wherein the at least one microLED includes an active layer including a first portion emitting firstlight in a first direction and a second portion emitting second light ina second direction different from the first direction.

The transferring of the at least one micro LED may include dividing theplurality of sub-pixel regions into a plurality of groups; andtransferring a plurality of micro LEDs to each group from among theplurality of groups.

The transferring of the plurality of micro LEDs may include sequentiallytransferring the plurality of micro LEDs to each group from among theplurality of groups, wherein the sequentially transferring of theplurality of micro LEDs includes transferring a selected plurality ofmicro LEDs, from among the plurality of micro LEDs, to sub-pixel regionsof a selected group from among the plurality of groups.

The simultaneously transferring of the selected plurality of micro LEDsmay include transferring a micro LED emitting red light, green light, orblue light to each sub-pixel region from among the sub-pixel regions ofthe selected group.

The pixel array panel may be provided on a backplane of an LED display.

The sub-pixel regions of the selected group may include a plurality ofred (R) sub-pixel regions, a plurality of green (G) sub-pixel regionsand a plurality of blue (B) sub-pixel regions to form a plurality ofpixels, wherein each pixel from among the plurality of pixels includesan R sub-pixel region from among the plurality of R sub-pixel regions, aG sub-pixel region from among the plurality of G sub-pixel regions, anda B sub-pixel region from among the plurality of B sub-pixel regions.

The simultaneously transferring of the selected plurality of micro LEDsto the sub-pixel regions of the selected group may include transferringa first micro LED to each R sub-pixel region from among the plurality ofR sub-pixel regions using a first inkjet head; transferring a secondmicro LED to each G sub-pixel region from among the plurality of Gsub-pixel regions using a second inkjet head; and transferring a thirdmicro LED to each B sub-pixel region from among the plurality of Bsub-pixel regions using a third inkjet head.

The plurality of micro LEDs may be transferred to each sub-pixel regionfrom among the plurality of sub-pixel regions.

The method may further include removing a micro LED that is notcorrectly transferred from among the plurality of micro LEDs transferredto each sub-pixel region from among the plurality of sub-pixel regions;and transferring a same type of micro LED as a type of the correctlytransferred micro LED to a position from which the micro LED is removed.

Banks may be provided between adjacent sub-pixel regions from among theplurality of sub-pixel regions.

Each of the sub-pixel regions may be divided into a plurality ofregions, and the method may further include transferring one micro LEDfrom among the plurality of micro LEDs to each region from among theplurality of regions.

Each region from among the plurality of regions may be defined by a moldfor guiding the transferred one micro LED.

The at least one micro LED may include a first semiconductor layer, theactive layer and a second semiconductor layer sequentially stacked toform a core-shell structure, and the at least one micro LED may includea vertical electrode micro LED or a horizontal electrode micro LED.

The method may further include transferring a respective micro LEDemitting a same color light to all of the plurality of sub-pixelregions.

The micro LEDs emitting the same color light may emit a blue light.

The method may further include forming a first light conversion materiallayer on each respective micro LED transferred to an R sub-pixel regionfrom among the plurality of sub-pixel regions; and forming a secondlight conversion material layer on each respective micro LED transferredto a G sub-pixel region from among the plurality of sub-pixel regions.

In accordance with an aspect of the disclosure, a method of transferringat least one micro LED to a pixel array panel including a plurality ofpixel regions, includes transferring a first micro LED to a first pixelregion from among the plurality of pixel regions; and transferring asecond micro LED to a second pixel region from among the plurality ofpixel regions, wherein the first micro LED and the second micro LED aretransferred by spraying using an inkjet method, wherein each of thefirst micro LED and the second micro LED includes an active layerincluding a first portion emitting first light in a first direction anda second portion emitting second light in a second direction differentfrom the first direction.

The transferring of the first micro LED to the first pixel region andthe transferring of the second micro LED to the second pixel region maybe performed simultaneously.

The transferring of the first micro LED to the first pixel region andthe transferring of the second micro LED to the second pixel region maybe performed sequentially.

A same type of micro LED may be transferred to the first pixel regionand the second pixel region.

A third micro LED may be transferred to a remaining pixel region fromamong the plurality of pixel regions using the inkjet method.

Each of the first micro LED and the second micro LED may include arespective first semiconductor layer, the respective active layer and arespective second semiconductor layer sequentially stacked to form arespective core-shell structure, and each of the first micro LED and thesecond micro LED may include a vertical electrode micro LED or ahorizontal electrode micro LED.

The transferring of the first micro LED to the first pixel region mayinclude spraying a solution in which micro LEDs are mixed to the firstpixel region using a first inkjet head.

The transferring of the first micro LED to the first pixel region mayinclude transferring a plurality of first micro LEDs to the first pixelregion, transferring a first group of first micro LEDs from among theplurality of first micro LEDs to a first sub-pixel region of the firstpixel region using a first inkjet head; transferring a second group offirst micro LEDs from among the plurality of first micro LEDs to asecond sub-pixel region of the first pixel region using a second inkjethead; and transferring a third group of first micro LEDs from among theplurality of first micro LEDs to a third sub-pixel region of the firstpixel region using a third inkjet head.

The transferring of the first group, the transferring of the secondgroup, and the transferring of the third group may be sequentially orsimultaneously performed.

The transferring of the first group, the transferring of the secondgroup, and the transferring of the third group may be sequentiallyperformed, wherein the method further includes, after the transferringof the plurality of first micro LEDs, removing a first micro LED fromamong the plurality of transferred first micro LEDs that is notcorrectly transferred; and transferring a same type of micro LED as atype of the correctly transferred first micro LED to a position fromwhich the first micro LED is removed, and the removing and thetransferring of the same type of micro LED are performed after thetransferring of the plurality of second micro LEDs and the transferringof the plurality of third micro LEDs are performed.

The first sub-pixel region, the second sub-pixel region, and the thirdsub-pixel region may each be surrounded by a respective bank.

Each of the first sub-pixel region, the second sub-pixel region, and thethird sub-pixel region comprises a respective plurality of regions, andthe method may further include transferring one micro LED from among theplurality of first micro LEDs to each region from among the plurality ofregions.

Each region from among the plurality of regions may be defined by a moldfor guiding the transferred one micro LED.

The transferring of the micro LED to the second pixel region may includetransferring a plurality of second micro LEDs to the second pixelregion; transferring a first group of second micro LEDs from among theplurality of second micro LEDs to a first sub-pixel region of the secondpixel region using a first inkjet head; transferring a second group ofsecond micro LEDs from among the plurality of second micro LEDs to asecond sub-pixel region of the second pixel region using a second inkjethead; and transferring a third group of second micro LEDs from among theplurality of second micro LEDs to a third sub-pixel region of the secondpixel region using a third inkjet head.

The transferring of the first group, the transferring of the secondgroup, and the transferring of the third group may be sequentially orsimultaneously performed.

The transferring of the first group, the transferring of the secondgroup, and the transferring of the third group may be sequentiallyperformed, wherein the method further includes, after the transferringof the plurality of second micro LEDs, removing a second micro LED fromamong the plurality of transferred second micro LEDs that is notcorrectly transferred, and wherein the removing is performed after thetransferring of the plurality of second micro LEDs and the transferringof the plurality of third micro LEDs are performed.

Each of the first sub-pixel region, the second sub-pixel region, and thethird sub-pixel region may include a respective plurality of regions,and the method may further include transferring one micro LED from amongthe plurality of second micro LEDs to each region from among theplurality of regions.

Each region from among the plurality of regions may be defined by a moldfor guiding the transferred one micro LED.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features, and advantages of certainembodiments of the disclosure will be more apparent from the followingdescription taken in conjunction with the accompanying drawings, inwhich:

FIG. 1 is a plan view showing a process of transferring a micro lightemitting diode (LED) to a pixel array panel using an inkjet head, in amicro LED transfer method for an LED display according to an embodiment;

FIG. 2 is an enlarged plan view of a part including a selected region ofFIG. 1 , that is, two parallel pixel regions adjacent to each other inthe Y-axis direction;

FIG. 3 is a cross-sectional view of FIG. 2 taken along a 3-3′ direction;

FIG. 4 is a cross-sectional view of FIG. 2 taken along a 4-4′ direction;

FIG. 5 shows an example of a cross-section of FIG. 2 taken along the3-3′ direction;

FIG. 6 shows an example of a cross-section of FIG. 2 taken along the4-4′ direction;

FIG. 7 is a plan view showing an embodiment of the selected region ofFIG. 1 ;

FIG. 8 is a cross-sectional view of FIG. 7 taken along an 8-8′direction;

FIG. 9 is a cross-sectional view of FIG. 7 taken along a 9-9′ direction;

FIG. 10 is a cross-sectional view showing another form of a mold ofFIGS. 8 and 9 ;

FIGS. 11 to 13 are cross-sectional views illustrating an example of amethod of transferring micro LEDs to pixel regions shown in FIGS. 2 to 4using an inkjet head;

FIGS. 14 and 15 show a process of transferring a micro LED to a pixelregion defined by a bank shown in FIGS. 2, 5 and 6 using an inkjet head;

FIG. 16 is a plan view showing micro LED transfer results according tomicro LED transfer methods shown in FIGS. 11 to 15 ;

FIG. 17 is a plan view illustrating a case in which only micro LEDsmounted upside down are selectively removed from each sub-pixel of FIG.16 and only micro LEDs correctly mounted remain in each sub-pixel;

FIG. 18 is a plan view showing a case in which only micro LEDs correctlymounted are selectively removed from each sub-pixel of FIG. 16 and onlythe micro LEDs mounted upside down remain in each sub-pixel;

FIG. 19 is a cross-sectional view showing an example of a micro LEDtransferred by using the micro LED transfer methods of FIGS. 11 to 15 ;

FIG. 20 is a cross-sectional view showing FIG. 16 taken along a 20-20′direction when no bank is present in the perimeter of sub-pixels on asubstrate;

FIG. 21 is a cross-sectional view showing a case where all of thetransferred micro LEDs are in contact with an electrode wiring andsurrounded by a passivation layer in FIG. 20 ;

FIG. 22 is a cross-sectional view showing a case where a bank isprovided along with a second wiring layer on a substrate in the case ofFIG. 20 ;

FIG. 23 is a cross-sectional view showing a case where all of thetransferred micro LEDs are in contact with an electrode wiring andsurrounded by a passivation layer in FIG. 22 ;

FIG. 24 is a cross-sectional view showing an example of a micro LEDtransferred to first to third sub-pixel regions illustrated in FIGS. 7to 9 ;

FIGS. 25 to 27 are cross-sectional views showing processes oftransferring a micro LED to each pixel while moving an inkjet head in atraveling direction (Y-axis direction) of the inkjet head, i.e., in adirection parallel to the 8-8′ direction of FIG. 7 , with respect to apixel array panel of FIG. 1 , according to operations;

FIG. 28 is an enlarged view of a second sub-pixel region of a firstpixel of FIG. 27 ;

FIG. 29 is a cross-sectional view showing a case in which all micro LEDstransferred to first to fourth regions of a second sub-pixel region of afirst pixel of FIG. 28 are correctly mounted;

FIGS. 30 to 32 are cross-sectional views illustrating a process oftransferring a horizontal electrode micro LED to different sub-pixelregions of each pixel according to operations in a micro LED transfermethod according to an embodiment; and

FIG. 33 shows a micro LED transfer method according to an embodiment.

DETAILED DESCRIPTION

Reference will now be made in detail to embodiments, examples of whichare illustrated in the accompanying drawings, wherein like referencenumerals refer to like elements throughout. In this regard, embodimentsmay have different forms and should not be construed as being limited tothe descriptions set forth herein. Accordingly, embodiments are merelydescribed below, by referring to the figures, to explain aspects. Asused herein, the term “and/or” includes any and all combinations of oneor more of the associated listed items. Expressions such as “at leastone of,” when preceding a list of elements, modify the entire list ofelements and do not modify the individual elements of the list.

Hereinafter, with reference to the accompanying drawings, a micro LEDtransfer method for an LED display will be described in detail. Thethickness of a layer or regions illustrated in the drawings may beexaggerated for convenience of explanation and clarity. Embodimentsdescribed below are merely examples, and various modifications may bepossible from the embodiments. In a layer structure described below, anexpression “above” or “on” may include not only “immediately on in acontact manner” but also “on in a non-contact manner”.

FIG. 1 shows a process of transferring at least one micro light emittingdiode (LED) to a pixel array panel 100 using an inkjet head 150 as amicro LED transfer method for an LED display according to an embodiment.The pixel array panel 100 includes a plurality of pixel regions 120, andeach pixel region 120 may be a region to which the micro LED is to betransferred. The pixel array panel 100 may be provided on a backplane ofthe LED display. As a micro LED is transferred to each pixel region 120,each pixel region 120 may become a pixel. The micro LED transferred toeach pixel region 120 may be used as a light source of each pixel. Theplurality of pixel regions 120 may be divided into a plurality ofgroups. Each group may include some pixel regions of the plurality ofpixel regions 120. When the total number of the plurality of pixelregions 120 is NP and the number of groups is NG, the number of pixelregions included in one group may be NP/NG. Therefore, the number ofpixel regions 120 included in each group is smaller than the totalnumber of pixel regions 120.

Meanwhile, regions having the same light emission characteristics may begrouped among a plurality of sub-pixel regions included in the pluralityof pixel regions. For example, a plurality of sub-pixel regions (Rsub-pixel regions) emitting red light included in the plurality of pixelregions may be grouped and referred to as an R sub-pixel region group.In this way, the plurality of pixel regions 120 may be divided intovarious groups. In other words, each group may include sub-pixel regionscorresponding to the same color from different pixel regions.

The inkjet head 150 includes an injection hole 154 through which a microLED is injected. The injection hole 154 may be an injection nozzle. Thepixel array panel 100 may be a part or whole of a pixel array panelcorresponding to the entire LED display. The inkjet head 150 may be amember that transfers the micro LED to each pixel region of the pixelarray panel 100. For example, the inkjet head 150 may be designed tospray a solution in which micro LEDs are distributed instead of sprayingink in an inkjet head structure applied to an inkjet printer. In thepixel array panel 100, the plurality of pixel regions 120 may be alignedin horizontal and vertical directions or in X and Y directions as shownin FIG. 1 to form an array. The inkjet head 150 may transfer at leastone micro LED to each pixel region 120 while traversing the pixel arraypanel 100 from one side of the pixel array panel 100 to the other. Thetransfer of the micro LED may be performed individually for each pixelregion 120. The inkjet head 150 may be an inkjet head for transferring amicro LED emitting red light (R). The inkjet head 150 may be an inkjethead for transferring a micro LED emitting green light (G). The inkjethead 150 may be an inkjet head for transferring a micro LED emittingblue light (B). The inkjet head 150 may include a plurality of heads,for example, a plurality of inkjet heads for simultaneously transferringthe same type of micro LEDs, or a plurality of inkjet heads forsimultaneously or sequentially transferring different types (e.g.,different colors) of micro LEDs.

In a process of transferring the micro LED, the inkjet head 150 maytraverse the pixel array panel 100 in a given direction, for example,from the lower end of the pixel array panel 100 to the upper end (in theY-axis direction). In an embodiment, the inkjet head 150 may move fromleft to right (in the X-axis direction) of the pixel array panel 100 orin the opposite direction and transfer the micro LED to the pixel arraypanel 100.

FIG. 2 is an enlarged plan view of a part including a selected region μlof FIG. 1 , that is, two pixel regions 120 adjacent and parallel to eachother in the Y-axis direction.

Referring to FIG. 2 , each pixel region 120 includes first to thirdsub-pixel regions SP1, SP2, and SP3. The first sub-pixel region SP1 maybe a region in which a micro LED emitting red light is mounted. Thesecond sub-pixel region SP2 may be a region in which a micro LEDemitting green light is mounted. The third sub-pixel region SP3 may be aregion in which a micro LED emitting blue light is mounted. The first tothird sub-pixel regions SP1 to SP3 are spaced apart from each other. Thespaces between the first to third sub-pixel regions SP1 to SP3 may beconstant.

FIG. 3 is a cross-sectional view of FIG. 2 taken along a 3-3′ direction.

Referring to FIG. 3 , a second wiring layer GL is formed on the secondsub-pixel region SP2 of a substrate 110. The entire second sub-pixelregion SP2 is covered with the second wiring layer GL. The second wiringlayer GL may be wiring that supplies power to a micro LED mounted on thesecond sub-pixel region SP2. The micro LED may be mounted on the secondwiring layer GL.

FIG. 4 is a cross-sectional view of FIG. 2 taken along a 4-4′ direction.

Referring to FIG. 4 , a first wiring layer RL is present on the firstsub-pixel region SP1 of the substrate 110. The second wiring layer GL isprovided on the second sub-pixel region SP2. A third wiring layer BL ispresent on the third sub-pixel region SP3. The materials of the first tothird wiring layers RL, GL, and BL may be the same, but may be differentfrom each other. A micro LED emitting red light may be mounted on thefirst wiring layer RL. A micro LED emitting green light may be mountedon the second wiring layer GL. A micro LED emitting blue light may bemounted on the third wiring layer BL. The spaces between the first tothird wiring layers RL, GL, and BL may be constant or different. Thefirst to third wiring layers RL, GL, and BL may have the same thickness.One electrode of a micro LED may be connected to the power sourcethrough any of the first to third wiring layers RL, GL, and BL. Theentire first sub-pixel region SP1 of the substrate 110 is covered withthe first wiring layer RL. The entire second sub-pixel region SP2 of thesubstrate 110 may be covered with the second wiring layer GL. The entirethird sub-pixel region SP3 of the substrate 110 may be covered with thethird wiring layer BL.

FIG. 5 shows an example of a cross-section of FIG. 1 taken along the3-3′ direction.

Referring to FIG. 5 , a bank 520 defining the second sub-pixel regionSP2 is formed on the substrate 110. The second sub-pixel region SP2exists between the banks 520. Horizontally, the bank 520 and the secondsub-pixel region SP2 are in contact with each other. The second wiringlayer GL is on the second sub-pixel region SP2. The total thickness ofthe second wiring layer GL may be uniform. The second wiring layer GLand the bank 520 may be in contact with each other. The bank 520 may behigher than the second wiring layer GL. That is, the upper surface ofthe bank 520 may be higher than the upper surface of the second wiringlayer GL. The bank 520 may serve as a fence for each of the sub-pixelregions SP1 to SP3. The bank 520 may be an insulating layer. A height 5Hof the bank 520 may be greater than the sum of the thickness of a wiringlayer RL, GL, or BL and the height of a micro LED to be transferred onthe wiring layer RL, GL, or BL. That is, after the micro LED istransferred on each of the wiring layers RL, GL, and BL, the highestheight of the transferred micro LED may be lower than the upper surfaceof the adjacent bank 520.

FIG. 6 shows an example of a cross-section of FIG. 2 taken along the4-4′ direction.

Referring to FIG. 6 , the bank 520 defining the first to third sub-pixelregions SP1, SP2, and SP3 is formed on the substrate 110. The first tothird sub-pixel regions SP1, SP2, and SP3 are positioned between thebanks 520. The first wiring layer RL, the second wiring layer GL, andthe third wiring layer BL respectively formed on the first to thirdsub-pixel regions SP1, SP2, and SP3 of the substrate 110 are present.Each wiring layer RL, GL, and BL is in contact with the adjacent bank520. The upper surface of the substrate 110 between the sub-pixelregions SP1, SP2, and SP3 may be completely covered with the bank 520.In FIGS. 5 and 6 , it may be seen that the perimeter of each sub-pixelregion SP1, SP2, and SP3 of the substrate 110 is completely covered withthe bank 520. Accordingly, the perimeter of the pixel region 120 of thesubstrate 110 is also covered with the bank 520.

The micro LED having a vertical electrode may be mounted on each of thesub-pixel regions SP1, SP2, and SP3 illustrated in FIGS. 2 to 6 . FIG. 7shows an embodiment of a portion of the selected region μl of FIG. 1 .

FIG. 7 shows only one pixel region 120 of the two pixels included in theselected region μl for convenience.

Referring to FIG. 7 , the pixel region 120 includes first to thirdsub-pixel regions SP1′, SP2′, and SP3′. The first sub-pixel region SP1′may be a sub-pixel region in which a micro LED emitting red light ismounted. The second sub-pixel region SP2′ may be a sub-pixel region inwhich a micro LED emitting green light is mounted. The third sub-pixelregion SP3′ may be a sub-pixel region in which a micro LED emitting bluelight is mounted. The first sub-pixel region SP1′ may include first tofourth regions R1, R2, R3, and R4. The first to fourth regions R1, R2,R3, and R4 are spaced apart from each other, and the spaces may beconstant. A mold 710 may exist between the first to fourth regions R1,R2, R3, and R4. That is, the first to fourth regions R1, R2, R3, and R4may be regions defined by the mold 710. The second sub-pixel region SP2′may include first to fourth regions G1, G2, G3, and G4. The first tofourth regions G1, G2, G3, and G4 are spaced apart from each other, andare aligned in parallel with the first to fourth regions R1, R2, R3, andR4 of the first sub-pixel region SP1′. The first to fourth regions G1,G2, G3, and G4 of the second sub-pixel region SP2′ are spaced apart fromeach other, and the mold 710 exists therebetween. The third sub-pixelregion SP3′ includes first to fourth regions B1, B2, B3, and B4. Thefirst to fourth regions B1, B2, B3, and B4 are aligned in parallel withthe first to fourth regions G1, G2, G3, and G4 of the second sub-pixelregion SP2′. The first to fourth regions B1, B2, B3, and B4 of the thirdsub-pixel region SP3′ are spaced apart from each other, and the mold 710exists therebetween. The mold 710 may surround the entire first to thirdsub-pixel regions SP1′, SP2′, and SP3′. In other words, each sub-pixelregion SP1′, SP2′, and SP3′ may be also surrounded by the mold 710. Eachof regions R1-R4, G1-G4, and B1-B4 of the first to third sub-pixelregions SP1′, SP2′, and SP3′ may include the same electrode wiringlayer. For example, as an example of the first sub-pixel region SP1′,the first region R1 of the first sub-pixel region SP1′ may include afirst wiring layer 720 and a second wiring layer 730. The first wiringlayer 720 and the second wiring layer 730 are spaced apart from eachother. The first wiring layer 720 is formed in a direction parallel tothe X axis. The second wiring layer 730 includes a component parallel tothe X axis and a component parallel to the Y axis. The second wiringlayer 730 may be disposed in a form surrounding the first wiring layer720 as shown in FIG. 7 . A part of the second wiring layer 730 parallelto the X axis is disposed both above and below the first wiring layer720. A part of the second wiring layer 730 parallel to the Y axis islocated on the left side of the first wiring layer 720. The first wiringlayer 720 may be bonded to any one of a P-type electrode and an N-typeelectrode of a micro LED to be mounted on the first region R1. Thesecond wiring layer 730 may be bonded to the other one of the twoelectrodes of the micro LED. For example, the first wiring layer 720 maybe bonded to the P-type electrode of the micro LED mounted on the firstregion R1, and the second wiring layer 730 may be bonded to the N-typeelectrode of the micro LED. The mold 710 defining each of the sub-pixelregions SP1′, SP2′, and SP3′ in the pixel region 120 may be aninsulating material layer. The mold 710 may be configured to serve toguide the micro LED to each region of each sub-pixel region SP1′, SP2′,and SP3′. Each of the first to third sub-pixel regions SP1′, SP2′, andSP3′ includes four regions, but is not limited to four regions, and mayinclude more or fewer than four regions.

FIG. 8 is a cross-sectional view of FIG. 7 taken along an 8-8′direction.

Referring to FIG. 8 , the molds 710 are disposed on the substrate 110 ata given interval. The mold 710 may define the first to fourth regions G1to G4 of the second sub-pixel region SP2′. The first wiring layer 720and the second wiring layer 730 are formed on each region of thesubstrate 110 corresponding to the first to fourth regions G1 to G4. Theheight of the upper surface of the mold 710 may be higher than the uppersurfaces of the first and second wiring layers 720 and 730. As will bedescribed later, the cross-sectional shape of the mold 710 may be othershapes. For convenience, the cross section of the mold 710 is shown as arectangle. In each region G1, G2, G3, and G4, the first wiring layer 720is positioned between portions of the second wiring layer 730.

FIG. 9 is a cross-sectional view of FIG. 7 taken along a 9-9′ direction.

Referring to FIG. 9 , the mold 710 is disposed on the substrate 110. Themold 710 defines the second region R2 of the first sub-pixel regionSP1′, the second region G2 of the second sub-pixel region SP2′, and thesecond region B2 of the third sub-pixel region SP3′ on the substrate110. The first wiring layer 720 and the second wiring layer 730 areformed on the substrate 110 in each of the second regions R2, G2, andB2. The first wiring layer 720 is in contact with the mold 710 on theright. The second wiring layer 730 is in contact with the mold 710 onthe left. A part of the right side of the first wiring layer 720 may becovered with the mold 710.

Meanwhile, the shape of the mold 710 in FIGS. 8 and 9 may be different.For example, as illustrated in FIG. 10 , the mold 710 may have a shapein which the lower end is wider than the upper end. That is, the widthof the mold 710 may decrease from the bottom to the top. Accordingly,both side surfaces 7S1 and 7S2 of the mold 710 are inclined surfaces.The inclined surface may become a surface that guides a micro LED toeach sub-pixel region. When the micro LED is transferred while thecross-section of the micro LED transferred to each sub-pixel regionmaintains the same shape as the cross-section of each sub-pixel region(for example, an inverted rhombus tapered toward the bottom), thetransferred micro LED may be correctly mounted on the correspondingsub-pixel region. Conversely, when the micro LED transferred to eachsub-pixel region is transferred in an inverted state, the transferredmicro LED has the cross-section of a non-inverted rhombus shape and isdifficult to be mounted on the corresponding sub-pixel region.

As a result, the mold 710 having the inclined side surfaces 7S1 and 7S2may be a self-alignment member or self-aligning means of the micro LEDtransferred to each sub-pixel region. Therefore, the transfer efficiencyof the micro LED may increase. That is, as micro LEDs are transferred byusing an inkjet injection method, the number of micro LEDs accuratelyand correctly transferred to the sub-pixel regions may increase.

FIG. 11 shows an example of a method of transferring micro LEDs 1120 topixel regions shown in FIGS. 2 to 4 using an inkjet head.

FIG. 11 shows a process of transferring the micro LEDs 1120 to the samesub-pixel region (i.e., the same group) of a plurality of pixel regions.Here, the same sub-pixel region may be, for example, a region on which amicro LED emitting red light is mounted.

Referring to FIG. 11 , the inkjet head 150 first drops (sprays) a microLED droplet 1150 on the first wiring layer RL1 of a first sub-pixelregion of a first pixel region. The micro LED droplet 1150 may includethe plurality of micro LEDs 1120 and a volatile solution 1130. The microLED droplets 1150 may include one or more micro LEDs 1120, for example,one to six micro LEDs 1120. The micro LED droplet 1150 is ejectedthrough an injection hole 154 of the inkjet head 150. The inkjet head150 may accommodate a micro LED solution. The micro LED solution refersto the solution 1130 in which the plurality of micro LEDs 1120 areuniformly mixed (distributed). In an example, the solution 1130 may bewater, a solvent, or a volatile organic material.

The inkjet head 150 may contain an amount of a micro LED solutioncapable of transferring the micro LEDs 1120 to the plurality of pixelregions.

When the micro LED droplets 1150 are sprayed (dropped) on the firstwiring layer RL1 of the first sub-pixel region of the first pixelregion, as shown in FIG. 12, the plurality of micro LEDs 1120 may bealigned (mounted) on the first wiring layer RL1. The solution 1130covering the aligned micro LEDs 1120 is volatilized soon, and only theplurality of micro LEDs 1120 remain on the first wiring layer RL1. InFIG. 12 , for convenience, the micro LEDs 1120 are aligned on the firstwiring layer RL1 at regular spaces, but as illustrated in FIG. 16 , thespaces between the transferred plurality of micro LEDs 1120 may not beconstant. Also, some of the micro LEDs 1120 may be mounted upside down.

After the micro LEDs 1120 are transferred onto the first wiring layerRL1 of the first sub-pixel region of the first pixel region, as shown inFIG. 12 , the inkjet head 150 is moved over the first wiring layer RL2of a first sub-pixel region of a second pixel region and then one dropof the micro LED droplets 1150 is sprayed (dropped) on the first wiringlayer RL2.

Next, as shown in FIG. 13 , one drop of the micro LED droplets 1150 issprayed onto a first wiring layer RL3 of a first sub-pixel region of athird pixel region. This spray process is repeated until an nth pixelregion. The nth pixel region may be the last pixel in the Y-axisdirection in FIG. 1 . After the micro LED droplets 1150 are sprayed on afirst wiring layer RLn of a first sub-pixel region of the n-th pixelregion to mount the micro LED on the first wiring layer RLn, a secondmicro LED is mounted on a second wiring layer of each second sub-pixelregion of the first to n-th pixel regions by using a second inkjet head.The second inkjet head may be structurally the same as the inkjet head150 except for only a type of the micro LED accommodated in a head. Thewavelength of light emitted from the second micro LED may be differentfrom the wavelength of light emitted from the micro LED 1120(hereinafter, a first micro LED). For example, red light R may beemitted from the first micro LED 1120 and green light G may be emittedfrom the second micro LED. The micro LED transfer process using thesecond inkjet head may be the same as the micro LED transfer processusing the inkjet head 150 (hereinafter, a first inkjet head).

After the micro LED transfer process is performed using the secondinkjet head, a third micro LED may be mounted on a third wiring layer ofeach third sub-pixel region of the first to nth pixel regions using athird inkjet head. The third inkjet head may differ only in the type ofmicro LED to be transferred, and may be structurally the same as thefirst inkjet head 150 and the second inkjet head. The light emissioncharacteristics of the third micro LED may be different from those ofthe first micro LED 1120 and the second micro LED. For example, thethird micro LED may be a micro LED emitting blue light (B).

In the process of transferring the first micro LED 1120 and the secondand third micro LEDs, the first inkjet head 150 and the second and thirdinkjet heads may be sequentially or simultaneously moved. For example,the first micro LED 1120 may be transferred onto the wiring layers RL1,RL2, RL3, . . . RLn of the first sub-pixel regions of the first to nthpixel regions using the first inkjet head 150 and then, the second microLED may be transferred onto the wiring layers of the second sub-pixelregions of the first to nth pixel regions using the second inkjet head,and continuously the third micro LED may be transferred onto the wiringlayers of the third sub-pixel regions of the first to nth pixel regionsusing the third inkjet head. Alternatively, the first micro LED 1120,the second micro LED, and the third micro LED are all simultaneouslysprayed on the wiring layers RL1, RL2, RL3, . . . RLn of the firstsub-pixel regions of the first to nth pixel regions, the wiring layersof the second sub-pixel regions of the first to nth pixel regions andthe wiring layers of the third sub-pixel regions of the first to nthpixel regions, respectively, by using the first inkjet head 150 and thesecond and third inkjet heads together and thus, the micro LED emittingred light, the micro LED emitting green light, and the micro LEDemitting blue light may be simultaneously transferred on the sub-pixelregions of each pixel region respectively. The first inkjet head 150 maybe moved from the left to the right of the pixel array panel 100 of FIG.1 , i.e., in the X-axis direction. This movement may also be applied tothe second and third inkjet heads.

FIGS. 14 and 15 show a process of transferring a micro LED to a pixelregion defined by the bank 520 described with reference to FIGS. 2, 5and 6 using an inkjet head.

A micro LED transfer method illustrated in FIGS. 14 and 15 may beperformed in the same manner as the micro LED transfer method describedwith reference to FIGS. 11 to 13 . In FIGS. 14 and 15 , the first inkjethead 150 may be an inkjet head for transferring a micro LED emitting redlight, an inkjet head for transferring a micro LED emitting green light,or an inkjet head for transferring a micro LED emitting blue light.Therefore, depending on the use of the first inkjet head 150, the microLED 1120 injected from the first inkjet head 150 may be the micro LEDemitting red light, the micro LED emitting green light, or the micro LEDemitting blue light.

FIG. 16 shows micro LED transfer results according to micro LED transfermethods shown in FIGS. 11 to 15 .

Referring to FIG. 16 , a plurality of micro LEDs 16RL, 16RD, 16GL, 16GD,16BL, and 16BD are present in each of first to third sub-pixels 16R,16G, and 16B of a pixel 1600. The number of micro LEDs present in eachsub-pixel 16R, 16G, and 16B of each pixel 1600 may be the same ordifferent. For example, four micro LEDs 16RL and 16RD may be present inthe first sub-pixel 16R of the pixel 1600, and five micro LEDs 16RL and16RD may be present in the first sub-pixel 16R of another pixel 1600 n.As such, the number of micro LEDs mounted on corresponding sub-pixelsbetween pixels may be the same or different from each other. Even in thesame pixel 1600, the total number of micro LEDs mounted on eachsub-pixel 16R, 16G, and 16B may be the same or different from eachother. For example, as illustrated in FIG. 16 , five micro LEDs may bemounted on the first sub-pixel 16R of the pixel 1600, and four microLEDs may be mounted on the second and third sub-pixels 16G and 16B.Further, even when the same number of micro LEDs is mounted on eachsub-pixel 16R, 16G, 16B of the same pixel 1600, the number of normallymounted micro LEDs may be the same or different for each sub-pixel 16R,16G, and 16B. For example, among the micro LEDs 16RL and 16RD mounted onthe first sub-pixel 16R, the number of normally mounted micro LEDs 16RLmay be 2, and among the micro LEDs 16GL and 16GD mounted on the secondsub-pixel 16G, the number of normally mounted micro LEDs 16GL may be 3.

The micro LEDs 16RL and 16RD disposed in the first sub-pixel 16R in eachof the pixels 1600 and 1600 n may be micro LEDs emitting red light.Therefore, the first sub-pixel 16R becomes a sub-pixel that emits redlight.

The spaces between the micro LEDs 16RL and 16RD present in the firstsub-pixel 16R of the pixel 1600 may be the same or different from eachother. Further, the micro LEDs 16RL, 16RD, 16GL, 16GD, 16BL, and 16BD ineach sub-pixel 16R, 16G, and 16B may or may not be aligned in a line.Among the micro LEDs 16RL, 16RD, 16GL, 16GD, 16BL, and 16BD mounted oneach sub-pixel 16R, 16G, and 16B, some micro LEDs 16RL, 16GL, and 16BLare correctly mounted micro LEDs, and the remaining micro LEDs 16RD,16GD, and 16BD are incorrectly, i.e., upside down, mounted micro LEDs.Here, “correctly mounted micro LED” refers to a micro LED that emitslight normally when a voltage for the operation of a micro LED isapplied. The micro LEDs 16RD, 16GD, and 16BD mounted upside down do notemit light even when the operating voltage is applied. Therefore, themicro LEDs 16RD, 16GD, and 16BD mounted upside down may be referred toas dummy micro LEDs or dummy patterns. These descriptions of the microLEDs 16RL, 16RD, 16GL, 16GD, 16BL, and 16BD mounted on each sub-pixel16R, 16G, and 16B of the pixel 1600 may be applied to sub-pixels ofother pixels.

As shown in FIG. 16 , after the micro LEDs 16RL, 16RD, 16GL, 16GD, 16BL,and 16BD are mounted on the pixels 1600 and 1600 n, specific micro LEDsmay be selectively removed from each sub-pixel 16R, 16G, and 16B througha pre-bonding process. For example, when the pre-bonding process isperformed on each sub-pixel 16R, 16G, and 16B so that the adhesion forceof the micro LEDs 16RL, 16GL, and 16BL correctly mounted is higher thanthat of the micro LEDs 16RD, 16GD, and 16BD mounted upside down, onlythe micro LEDs 16RD, 16GD, and 16BD mounted upside down may beselectively removed from each sub-pixel 16R, 16G, and 16B. FIG. 17 showsthis result. That is, incorrectly transferred micro LEDs 16RD, 16GD, and16BD may be removed.

Conversely, when the micro LEDs 16RL, 16GL, and 16BL correctly mountedare removed from each sub-pixel 16R, 16G, and 16B, and only the microLEDs 16RD, 16GD, and 16BD mounted upside down are to be used, thepre-bonding process may be performed so that the adhesion force of themicro LEDs 16RD, 16GD, and 16BD mounted upside down relativelyincreases. As a result, as shown in FIG. 18 , only the micro LEDs 16RL,16GL, and 16BL correctly mounted are selectively removed from eachsub-pixel 16R, 16G, and 16B, and only the micro LEDs 16RD, 16GD, and16BD mounted upside down remain in each sub-pixel 16R, 16G, and 16B.Through this pre-bonding, the directionality of the transferred microLED may be selected.

FIG. 19 shows an example of the micro LED 1120 transferred by using themicro LED transfer methods of FIGS. 11 to 15 .

Referring to FIG. 19 , the micro LED 1120 may include a firstsemiconductor layer 1910, an active layer 1920, and a secondsemiconductor layer 1930. The first and second semiconductor layers 1910and 1930 may be semiconductor layers of opposite types. That is, one ofthe first and second semiconductor layers 1910 and 1930 may be a P-typesemiconductor layer and the other may be an N-type semiconductor layer.For example, the first semiconductor layer 1910 may be a compoundsemiconductor layer doped with N-type impurities, and the secondsemiconductor layer 1930 may be a compound semiconductor layer dopedwith P-type impurities. The first and second semiconductor layers 1910and 1930 may be compound semiconductor layers or may include compoundsemiconductor layers. For example, the compound semiconductor layer maybe a GaN layer, and may include a group Ill-V compound semiconductorlayer. The active layer 1920 may be a light emitting layer or mayinclude a light emitting layer. For example, the active layer 1920 mayinclude a light emitting layer that emits red light, green light, orblue light. In an example, the active layer 1920 may be a material layerhaving a multi-quantum well (MQW). The first semiconductor layer 1910may have a rhombus cross-section. The active layer 1920 is formed on anupper surface 19T and both side surfaces 19S1 and 19S2 of therhombus-shaped first semiconductor layer 1910. The active layer 1920 mayinclude a first portion 19P1 covering the upper surface 19T of the firstsemiconductor layer 1910 and a second portion 19P2 covering the sidesurfaces 19S1 and 19S2 of the first semiconductor layer 1910. The firstportion 19P1 may cover the entire upper surface 19T of the firstsemiconductor layer 1910. Light may be emitted from the first portion19P1 in the first direction. The first direction may be a directionperpendicular to the longitudinal direction of the first portion 19P1.Here, the “perpendicular direction” may include not only a directionorthogonal to the longitudinal direction of the first portion 19P1, butalso a direction inclined at an angle smaller than 45° to the left andright in the orthogonal direction. The second portion 19P2 may cover theentire side surfaces 19S1 and 19S2 of the first semiconductor layer1910. The second portion 19P2 may be a portion extended from both endsof the first portion 19P1 onto the both sides 19S1 and 19S2 of the firstsemiconductor layer 1910. The light may be emitted from the secondportion 19P2 in the second direction. The second direction may be adifferent direction from the first direction. The thickness of theactive layer 1920 may be uniform throughout. The first portion 19P1 ofthe active layer 1920 may be parallel to the upper surface 19T of thefirst semiconductor layer 1910. The second portion 19P2 of the activelayer 1920 may be parallel to the side surfaces 19S1 and 19S2 of thefirst semiconductor layer 1910. The second semiconductor layer 1930 isformed on the upper and side surfaces of the active layer 1920. Thesecond semiconductor layer 1930 may cover the entire active layer 1920.A corner portion where the first portion 19P1 and the second portion19P2 of the active layer 1920 meet is also covered with and protected bythe second semiconductor layer 1930. The upper surface of the secondsemiconductor layer 1930 may be parallel to the upper surface of thefirst portion 19P1 of the active layer 1920. Both sides of the secondsemiconductor layer 1930 may be parallel to both sides of the activelayer 1920, that is, the second portion 19P2.

As a result, the entire first semiconductor layer 1910 is covered withthe active layer 1920 except for the bottom surface, and most of thesurface of the active layer 1920 is covered with the secondsemiconductor layer 1930. That is, the first semiconductor layer 1910,the active layer 1920, and the second semiconductor layer 1930sequentially stacked have a layer structure in which the upper layersurrounds the lower layer. For convenience, this layer structure isreferred to as a core-shell structure. In the core-shell structure, asdescribed above, side surfaces and corner portions of the active layer1920 are protected by the second semiconductor layer 1930. A micro LEDhaving the above-described core-shell structure may be formed by growingon a crystallized membrane (e.g., an Al₂O₃ layer).

In order to mount a plurality of micro LEDs on a unit pixel, the size ofan LED needs to be reduced. As the size of the LED is reduced to themicro LED, the light emission efficiency is reduced. However, as shownin FIG. 19 , by forming the micro LED to have the core-shell structure,the side surfaces and the corner portions of the active layer 1920 arenaturally protected by the second semiconductor layer 1930 and are notexposed. Accordingly, even when the size of the LED is reduced to thesize of the micro LED, the reduction in the light emission efficiencymay be mitigated. That is, as the micro LED 1120 has the core-shellstructure, a rapid reduction in the light emission efficiency due to thesize reduction of the LED is prevented. The size of the micro LED 1120illustrated in FIG. 19 may be about 50 μm×50 μm, but is not limited tothis value.

Subsequently, a stack including the first semiconductor layer 1910, theactive layer 1920, and the second semiconductor layer 1930 forming thecore-shell structure is surrounded by an insulating layer 1940. That is,the insulating layer 1940 is formed on side surfaces and a portion ofthe upper surface of the second semiconductor layer 1930. The insulatinglayer 1940 may extend on the bottom surface of the second semiconductorlayer 1930, the bottom surface of the active layer 1920, and a portionof the bottom surface of the first semiconductor layer 1910. Except fora part of the bottom surface of the first semiconductor layer 1910 and apart of the top surface of the second semiconductor layer 1930, theentire surface of the stack is covered with the insulating layer 1940.The insulating layer 1940 may be in direct contact with thecorresponding surface of a material layer that is covered with theinsulating layer 1940. That is, the insulating layer 1940 may be indirect contact with the top, side, and bottom surfaces of the secondsemiconductor layer 1930, and may be in direct contact with the bottomsurface of the active layer 1920 and the bottom surface of the firstsemiconductor layer 1910.

The insulating layer 1940 may be an oxide layer or a nitride layer, forexample, a silicon oxide layer or a silicon nitride layer. Theinsulating layer 1940 may be used as a protective layer protecting themicro LED. The insulating layer 1940 includes a first contact hole 19 h1 exposing a part of the bottom surface of the first semiconductor layer1910 and a second contact hole 19 h 2 exposing a part of the uppersurface of the second semiconductor layer 1930. A first electrode layer1960 filling the first contact hole 19 h 1 is provided on the bottomsurface of the insulating layer 1940. A second electrode layer 1970filling the second contact hole 19 h 2 is present on the upper surfaceof the insulating layer 1940. One of the first electrode layer 1960 andthe second electrode layer 1970 may be a P-type electrode layercontacting a P-type semiconductor layer, and the other may be an N-typeelectrode layer directly contacting an N-type semiconductor layer. Forexample, the first electrode layer 1960 may be an N-type electrodelayer, and the second electrode layer 1970 may be a P-type electrodelayer. At least one of the first and second electrode layers 1960 and1970 may be a material layer that is transparent to light and hasconductivity. For example, an electrode layer formed in a direction inwhich light is emitted from the micro LEDs 16RL, 16RD, 16GL, 16GD, 16BL,and 16BD may be a transparent material layer. For example, the first andsecond electrode layers 1960 and 1970 may be Indium Tin Oxide (ITO)layers.

The micro LED 1120 of FIG. 19 has a structure in which the first andsecond electrode layers 1960 and 1970 are vertically stacked orvertically distributed. In other words, the first and second electrodelayers 1960 and 1970 may face up and down with respect to the activelayer 1920. The first electrode layer 1960 is provided below the activelayer 1920, and the second electrode layer 1970 is provided on theactive layer 1920. Accordingly, the micro LED 1120 of FIG. 19 isreferred to as a vertical electrode micro LED.

Meanwhile, for convenience of illustration, in the remaining drawingsthe micro LED 1120 shown in FIG. 19 is replaced with a drawing indicatedby the equivalent (=) shown in the lower portion of FIG. 19 .

FIG. 20 is a cross-sectional view of FIG. 16 taken along a 20-20′direction when no bank is present in the perimeter of sub-pixels on asubstrate.

Referring to FIG. 20 , the second wiring layer GL is provided on thesubstrate 110, and the four micro LEDs 16GL and 16GD are disposed on thesecond wiring layer GL. The spaces between the four micro LEDs 16GL and16GD may or may not be constant. Among the four micro LEDs 16GL and16GD, the two micro LEDs 16GL are correctly disposed, and the other twomicro LEDs 16GD are disposed upside down. In the case of the micro LED16GL normally aligned, the second electrode layer 1970 in FIG. 19 ispositioned on a bottom side, and the first electrode layer 1960 in FIG.19 is positioned on a top side such that the second electrode layer 1970is in direct contact with the second wiring layer GL. When an operatingvoltage is applied to the micro LED 16GL normally mounted, normal light,that is, green light 20G, is emitted from the micro LED 16GL. However,in the case of the micro LED 16GD abnormally mounted, as opposed to thatof the micro LED 16GL normally mounted, the first electrode layer 1960is in contact with the second wiring layer GL, and thus the micro LED16GD abnormally mounted does not operate even when the operating voltageis applied to the micro LED 16GD abnormally mounted. Therefore, thelight is not emitted from the micro LED 16GD abnormally mounted.

After the micro LEDs 16GL and 16GD are mounted on the second wiringlayer GL, as shown in FIG. 21 , a passivation layer 2110 surrounding themicro LEDs 16GL and 16GD may be formed on the second wiring layer GL.The passivation layer 2110 may be an insulating material layertransparent to light. For example, the passivation layer 2110 may be asilicon oxide layer. The passivation layer 2110 may cover the entiresecond wiring layer GL on the perimeter of the micro LEDs 16GL and 16GD.The passivation layer 2110 may fill spaces between the micro LEDs 16GLand 16GD. Accordingly, the micro LEDs 16GD and 16GL transferred on thesecond wiring layer GL may be buried in the passivation layer 2110except for the exposed upper surfaces. The height of the upper surface21S1 of the passivation layer 2110 may be the same as the height of theupper surfaces of the micro LEDs 16GD and 16GL. In an example, theheight of the upper surface 21S1 of the passivation layer 2110 may belower than the height of the upper surfaces of the micro LEDs 16GD and16GL. Accordingly, after the passivation layer 2110 is formed, the uppersurfaces of all the transferred micro LEDs 16GD and 16GL are exposed. Anelectrode wiring 2130 is provided on the passivation layer 2110 and themicro LEDs 16GD and 16GL. The electrode wiring 2130 covers the entireupper surfaces of the micro LEDs 16GD and 16GL. The electrode wiring2130 may cover the entire upper surface 21S1 of the passivation layer2110 on the perimeter of the upper surfaces of the micro LEDs 16GD and16GL. The electrode wiring 2130 may be in contact with all the microLEDs 16GD and 16GL transferred on the second wiring GL. The electrodewiring 2130 may contact the upper surfaces of all the transferred microLEDs 16GD and 16GL. Although the electrode wiring 2130 is provided tocontact the upper surfaces of all the micro LEDs 16GD and 16GL, theupper surfaces of the micro LEDs 16GL normally transferred and the microLEDs 16GD abnormally transferred are different from each other. That is,the polarities of the two upper surfaces are different. Therefore, evenwhen the operating voltage is applied to the micro LEDs 16GD and 16GLthrough the electrode wiring 2130, light (e.g., green light) is emittedonly from the micro LEDs 16GL correctly transferred, and the light isnot emitted from the micro LEDs 16GD transferred upside down.

As a result, the desired light may be emitted only from the micro LEDs16GL correctly transferred among the micro LEDs 16GD and 16GLtransferred on the second wiring GL.

The electrode wiring 2130 may be a material layer that is transparent tolight and has conductivity. For example, the electrode wiring 2130 maybe ITO wiring.

Meanwhile, the micro LEDs 16GL correctly mounted may not include thefirst electrode layer 1960 in the light emission direction. In thiscase, the first semiconductor layer (1910 of FIG. 19 ) of the micro LED16GL may be an upper surface. Therefore, the electrode wiring 2130 maybe directly connected to the first semiconductor layer 1910 of the microLED 16GL.

FIG. 22 shows a case in which the banks 520 are provided along with thesecond wiring layer GL on the substrate 110 in the case of FIG. 20 .

Referring to FIG. 22 , the banks 520 are spaced apart from each other onthe substrate 110. The bank 520 may define a region in which the secondwiring layer GL is formed. That is, the bank 520 may serve to define asub-pixel region. Because pixels include R, G, and B sub-pixels, thebank 520 may be regarded as serving to define a pixel region. The secondwiring layer GL is formed on the upper surface of the substrate 110between the banks 520, and the micro LEDs 16GL and 16GD are provided onthe second wiring layer GL, as in FIG. 20 . The micro LEDs 16GL and 16GDare surrounded by the passivation layer 2110, as shown in FIG. 23 . Thepassivation layer 2110 may cover the entire second wiring layer GL onthe perimeter of the micro LEDs 16GL and 16GD between the banks 520. Thepassivation layer 2110 may fill between the micro LEDs 16GL and 16GD.The passivation layer 2110 may fill between the bank 520 and the microLED 16GD. The configuration of FIG. 23 may be the same as theconfiguration of FIG. 21 except that the bank 520 is provided.Therefore, the alignment and contact relationship between thepassivation layer 2110, the micro LEDs 16GD, and 16GL and the electrodewiring 2130 between the banks 520 may be the same as described in FIG.21 .

Meanwhile, as described with reference to FIGS. 7 to 9 , when the firstand second wiring layers 720 and 730 are formed on the bottom of thefirst to third sub-pixel regions SP1′, SP2′, and SP3′ of the pixelregion 120, at least the electrode alignment of the micro LEDs having acore-shell structure, which are transferred to the first to thirdsub-pixel regions SP1′, SP2′, and SP3′ of the pixel region 120 by usingan inkjet injection method may be different from that of the first andsecond electrode layers 1960 and 1970 of FIG. 19 .

FIG. 24 shows an example of a micro LED 2410 transferred to the first tothird sub-pixel regions SP1′, SP2′, and SP3′ of the pixel region 120illustrated in FIGS. 7 to 9 .

Referring to FIG. 24 , the micro LED 2410 includes first to thirdelectrodes 24E1, 24E2, and 24E3. The stack structure of the firstsemiconductor layer 1910, the second semiconductor layer 1930 and theactive layer 1920 forming a core-shell structure in the micro LED 2410may be the same as that of FIG. 19 . The first to third electrodes 24E1,24E2, and 24E3 may be disposed on one side of the micro LED 2410. Forexample, the first to third electrodes 24E1, 24E2, and 24E3 may beprovided on the opposite side of the first semiconductor layer 1910 withrespect to the active layer 1920. That is, the first to third electrodes24E1, 24E2, and 24E3 may be positioned on the upper surface of thesecond semiconductor layer 1930 as shown in FIG. 24 . The first andsecond electrodes 24E1 and 24E2 may be N-type electrode layerscontacting the first semiconductor layer 1910. The third electrode 24E3may be a P-type electrode layer contacting the second semiconductorlayer 1930.

First and second trenches 24 h 1 and 24 h 2 are formed in the stackstructure including the first semiconductor layer 1910, the active layer1920, and the second semiconductor layer 1930. The first trench 24 h 1and the second trench 24 h 2 are spaced apart from each other. Thebottoms of the first and second trenches 24 h 1 and 24 h 2 arepositioned between both side surfaces 24S1 and 24S2 of the firstsemiconductor layer 1910. The first and second trenches 24 h 1 and 24 h2 are formed in the upper surface of the second semiconductor layer 1930toward the first semiconductor layer 1910. In other words, the first andsecond trenches 24 h 1 and 24 h 2 sequentially penetrate through thesecond semiconductor layer 1930 and the active layer 1920. The first andsecond trenches 24 h 1 and 24 h 2 further extend into the firstsemiconductor layer 1910 by a predetermined thickness. Accordingly, agroove that is a part of the first and second trenches 24 h 1 and 24 h 2exists in a portion corresponding to the first and second trenches 24 h1 and 24 h 2 of the first semiconductor layer 1910. The groove becomes alower end including the bottoms of the first and second trenches 24 h 1and 24 h 2. The insulating layer 1940 is formed on the upper and sidesurfaces of the second semiconductor layer 1930. The insulating layer1940 covers the entire upper surface of the second semiconductor layer1930 on the perimeter of the first and second trenches 24 h 1 and 24 h2. The insulating layer 1940 may also cover the entire side surfaces ofthe second semiconductor layer 1930. The insulating layer 1940 fills aportion of the first and second trenches 24 h 1 and 24 h 2. That is, theinsulating layer 1940 covers the inner side surfaces of the first andsecond trenches 24 h 1 and 24 h 2, and also covers a part of the bottom.The insulating layer 1940 covers only a part of the bottom of each ofthe first and second trenches 24 h 1 and 24 h 2, and thus the remainingpart of the bottom of each of the first and second trenches 24 h 1 and24 h 2, i.e., a part of the first semiconductor layer 1910, is exposedthrough the first and second trenches 24 h 1 and 24 h 2. The remainingpart of the first trench 24 h 1 is filled with the first electrode 24E1.That is, the first electrode 24E1 fills the remaining part of the firsttrench 24 h 1 and is also formed on a part of the insulating layer 1940on the perimeter of the first trench 24 h 1. The remaining part of thesecond trench 24 h 2 is filled with the second electrode 24E2. That is,the second electrode 24E2 fills the second trench 24 h 2 and is alsoformed on a part of the insulating layer 1940 on the perimeter of thesecond trench 24 h 2. The first and second electrodes 24E1 and 24E2 arespaced apart from each other.

The insulating layer 1940 includes a via hole 24 h 3. The via hole 24 h3 may be positioned between the first and second trenches 24 h 1 and 24h 2. A part of the second semiconductor layer 1930 is exposed throughthe via hole 24 h 3. The via hole 24 h 3 is filled with the thirdelectrode 24E3. The third electrode 24E3 is in contact with the exposedpart of the second semiconductor layer 1930 through the via hole 24 h 3.The third electrode 24E3 fills the via hole 24 h 3 and is also formed ona part of the insulating layer 1940 on the perimeter of the via hole 24h 3. The third electrode 24E3 is disposed between the first and secondelectrodes 24E1 and 24E2. The third electrode 24E3 is spaced apart fromthe first and second electrodes 24E1 and 24E2. The heights of the uppersurfaces of the first to third electrodes 24E1, 24E2, and 24E3 may bethe same. The first to third electrodes 24E1, 24E2, and 24E3 are allformed on the same side of the micro LED 2410, and the micro LED 2410having such an electrode alignment structure is referred to as ahorizontal electrode micro LED.

Meanwhile, for convenience of illustration, in the remaining drawingsthe micro LED 2410 shown in FIG. 24 is replaced with a simple drawingindicated by the equivalent (=) at a bottom portion of FIG. 24 .

Next, a process of transferring the micro LED 2410 illustrated in FIG.24 to each pixel region 120 of the pixel array panel 100 by using theinkjet injection method will be described with reference to FIGS. 25 to27 . The sub-pixel regions of each pixel region 120 may be the same asdescribed in FIGS. 7 to 9 .

FIGS. 25 to 27 show a process of transferring the micro LED 2410illustrated in FIG. 24 to each pixel while moving the first inkjet head150 in a traveling direction (Y-axis direction) of the first inkjet head150, i.e., in a direction parallel to the 8-8′ direction of FIG. 7 ,with respect to the pixel array panel 100 of FIG. 1 , according tooperations.

Referring to FIG. 25 , the first inkjet head 150 is positioned on asecond sub-pixel region 25G1 of a first pixel of the substrate 110. Adrop of the micro LED droplets 1150 is sprayed (dropped) from the firstinkjet head 150 into the second sub-pixel region 25G1. The micro LEDdroplets 1150 may include the plurality of micro LEDs 2410, for example,one to six micro LEDs 2410. The micro LED droplets 1150 are sprayed onthe second sub-pixel region 25G1 and, as illustrated in FIG. 26 , themicro LEDs 2410 may be aligned in the first to fourth regions G1, G2,G3, and G4 of the second sub-pixel region 25G1 one by one. Each of thefirst to fourth regions G1, G2, G3, and G4 may have the size in whichone micro LED 2410 may be mounted. Therefore, two micro LEDs 2410 maynot be mounted on any one of the first to fourth regions G1 to G4. Whenthe number of micro LEDs 2410 included in the micro LED droplets 1150 isgreater than the number of regions G1 to G4 included in the secondsub-pixel region 25G1, an extra micro LED 2410′ may be placed on themold 710 between the regions G1 to G4. As such, the micro LED 2410′ thatare not mounted on each region G1 to G4 and placed outside the regionsG1 to G4 may be removed in a subsequent process. The subsequent processmay be a process of removing an abnormally mounted micro LED after amicro LED transfer for a given region or section of the pixel arraypanel 100 is completed. The solution 1130 covering the first sub-pixelregion 25G1 is volatilized.

After the micro LED 2410 is transferred to the first to fourth regionsG1, G2, G3, and G4 of the second sub-pixel region 25G1 of the firstpixel, as shown in FIG. 26 , the first inkjet head 150 may be moved ontoa second sub-pixel region 25G2 of the second pixel next to the firstpixel. Subsequently, the first inkjet head 150 is aligned to a positionsuitable for spraying the micro LED droplets 1150 to the secondsub-pixel region 25G2. The movement and the alignment may be continuous,but may not. The movement and the alignment may be performed in oneoperation, but may not.

The spraying of the micro LED droplets 1150 using the first inkjet head150 may be performed in a similar or the same manner as the spraying ofink from an inkjet head of an inkjet printer.

After the first inkjet head 150 is aligned on the second sub-pixelregion 25G2 of the second pixel, the micro LED droplets 1150 are droppedon the second sub-pixel region 25G2. By spraying the micro LED droplets1150 on the second sub-pixel region 25G2, as shown in FIG. 27 , themicro LEDs 2410 each may be transferred to the first to fourth regionsG1, G2, G3, and G4 of the second sub-pixel region 25G2. This transferprocess is performed to a second sub-pixel region 25Gn of an nth (n=1,2, 3, . . . ) pixel.

After the micro LED transfer process on the second sub-pixel regions25G1 to 25Gn of each pixel is completed, the micro LED transfer processon the first sub-pixel region or the third sub-pixel region of eachpixel may be performed. The first sub-pixel region may be a sub-pixelregion emitting red light. The second sub-pixel regions 25G1 to 25Gn maybe sub-pixel regions emitting green light. The third sub-pixel regionmay be a sub-pixel region emitting blue light.

In an embodiment, the method of transferring the micro LED 2410 withrespect to each pixel may be performed by using a plurality of inkjetheads together. In this case, the micro LED transfer to the first tothird sub-pixel regions of each pixel may be performed simultaneously orsequentially. For example, three inkjet heads may be used together totransfer micro LEDs, and in this case, the types of the micro LEDssprayed from each inkjet head may be different. The micro LED emittedfrom a first inkjet head may be a micro LED emitting red light, themicro LED emitted from a second inkjet head may be a micro LED emittinggreen light, and the micro LED emitted from a third inkjet head may be amicro LED emitting blue light.

The micro LED transfer using an inkjet head enables accurate transferfor each pixel, and may also be rapidly performed, which may increasethe efficiency of micro LED transfer to a relatively large area pixelarray panel.

FIG. 28 is an enlarged view of the second sub-pixel region 25G1 of thefirst pixel of FIG. 27 .

Referring to FIG. 28 , micro LEDs 2410B transferred to the first andfourth regions G1 and G4 are mounted such that an electrode ispositioned at the top. Therefore, the electrode of the micro LEDs 2410Bdoes not contact the first and second wiring layers 720 and 730 formedon the substrate 110 of the first region G1. As a result, the micro LEDs2410B are upside down transferred (mounted) or abnormally transferred(mounted) micro LEDs. That is, the micro LEDs 2410B may be dummy microLEDs.

Conversely, in micro LEDs 2410A transferred to the second and thirdregions G2 and G3, the micro LEDs 2410A are transferred such that theelectrode is positioned at the bottom. That is, the micro LEDs 2410A arenormally transferred. Therefore, the micro LEDs 2410A mounted on thesecond and third regions G2 and G3 are in contact with the first andsecond wiring layers 720 and 730. Therefore, when an operating voltageis applied to the micro LEDs 2410A, light (e.g., green light) may beemitted from the micro LEDs 2410A.

Meanwhile, the mold 710 defining the first to fourth regions G1, G2, G3,and G4 may have a shape to induce the micro LED 2410 transferred to eachregion G1, G2, G3, and G4 to be correctly mounted on each region G1, G2,G3, and G4. For example, the mold 710 may have a rhombus shape taperedupward as shown separately at a bottom portion of FIG. 28 .

FIG. 29 shows a case in which all the micro LEDs 2410A transferred tothe first to fourth regions G1, G2, G3, and G4 are correctly mounted.

FIGS. 30 to 32 are cross-sectional views illustrating a process oftransferring a horizontal electrode micro LED to different sub-pixelregions of each pixel according to operations. For convenience ofillustration, an inkjet head and a micro LED included in micro LEDdroplets are omitted in each drawing.

First, as shown in FIG. 30 , after a first inkjet head HD1 is aligned onthe second region R2 of a first sub-pixel region of a selected pixel, afirst micro LED droplet 3050 is sprayed on the second region R2. Thefirst micro LED droplet 3050 may be a solution including the first microLED. The first micro LED may be a micro LED emitting red light.Thereafter, the first inkjet head HD1 may be moved on a second region ofa first sub-pixel region of another selected pixel, and may transfer themicro LED to the second region. The transfer process may be performed onsecond regions of first sub-pixel regions of other pixels.

Next, as shown in FIG. 31 , after a second inkjet head HD2 is aligned onthe second region G2 of a second sub-pixel region of the selected pixel,a second micro LED droplet 3150 is sprayed on the second region G2. Thesecond micro LED droplet 3150 may include second micro LEDs differentfrom the first micro LEDs. The second micro LED may be a micro LEDemitting green light. The micro LED 3100 transferred to the secondregion R2 of the first sub-pixel region represents the micro LEDtransferred using the first inkjet head HD1 of FIG. 30 .

The second inkjet head HD2 may be structurally the same as the firstinkjet head HD1. The difference between the first inkjet head HD1 andthe second inkjet head H2 is only a kind (e.g., color) of sprayed microLEDs. After the micro LED transfer to the second region G2 of the secondsub-pixel region of the selected pixel is completed, the second inkjethead HD2 is moved over a second region of a second sub-pixel region ofanother pixel, and then the micro LED droplet 3150 is dropped on thesecond region below and thus the micro LED may be transferred to thesecond region. Subsequently, the second micro LED may be transferred tothe second region of the second sub-pixel region of other pixels by thesame transfer method.

Next, as shown in FIG. 32 , after a third inkjet head HD3 is aligned onthe second region B2 of a third sub-pixel region of the selected pixel,a third micro LED droplet 3250 is dropped in the second region B2. Thethird inkjet head HD3 may be structurally the same as the first andsecond inkjet heads HD1 and HD2. The difference between the third inkjethead HD3 and the first and second inkjet heads HD1 and HD2 is only akind (e.g., a color) of sprayed micro LEDs. However, if there is nosignificant difference in the micro LED transfer process and transferefficiency, the structures of the first to third inkjet heads HD1 to HD3may be different from each other. The third micro LED droplet 3250 mayinclude third micro LEDs that are different from the first and secondmicro LEDs. The third micro LED may be a micro LED emitting blue light.After the micro LED transfer to the second region B2 of the thirdsub-pixel region of the selected pixel is completed, the third inkjethead HD3 is moved to the second regions of the third sub-pixel regionsof other pixels and thus the micro LED transfer may be performed. In thesame manner, the micro LED transfer to the second regions of the thirdsub-pixel regions of the remaining pixels may be performed. The microLED 3200 mounted on the second region G2 of the second sub-pixel regionrepresents the micro LED transferred by using the transfer method usingthe second inkjet head HD2 of FIG. 31 .

FIG. 33 shows a micro LED transfer method using inkjet spray accordingto an embodiment.

Referring to FIG. 33 , first micro LEDs 3300 are transferred to all thesub-pixel regions SP1′, SP2′, and SP3′ of a pixel 3000. That is, thesame micro LEDs are transferred to all the sub-pixel regions SP1′, SP2′,and SP3′ included in the pixel 3000. The first to third sub-pixelregions SP1′, SP2′, and SP3′ may be sub-pixel regions for horizontalelectrode micro LED transfer. The first micro LEDs 3300 may be, forexample, horizontal electrode micro LEDs emitting blue light B.

In an embodiment, the first to third sub-pixel regions SP1′, SP2′, andSP3′ may be replaced with sub-pixel regions for vertical electrode microLED transfer. In addition, the first micro LEDs 3300 may be replacedwith vertical electrode micro LEDs.

The first micro LEDs 3300 may be transferred by using a transfer methodusing the inkjet head described above. The first sub-pixel region SP1′is a region emitting red light R. The second sub-pixel region SP2′ is aregion emitting green light G. Therefore, after the first micro LEDs3300 are transferred, a subsequent process for emitting the red light Rand the green light G from the first and second sub-pixel regions SP1′and SP2′, respectively, may be performed. As an example, the first microLED 3300 mounted on the first sub-pixel region SP1′ and the first microLED 3300 mounted on the second sub-pixel region SP2′ are covered with atransparent and insulating passivation layer 3340. The passivation layer3340 may be formed to fill the first and second sub-pixel regions SP1′and SP2′ between first molds 3350 to completely cover at least the firstand second wiring layers 720 and 730 and the first micro LED 3300. Thestructure and material of the first mold 3350 may be the same as themold 710 described above. The upper surface of the passivation layer3340 may be flat. The height of the upper surface of the passivationlayer 3340 may be the same as or different from the height of the uppersurface of the first mold 3350. As described above, the passivationlayer 3340 is formed only in the first and second sub-pixel regions SP1′and SP2′, and then a first light conversion material layer CT1 is formedon the passivation layer 3340 of the first sub-pixel region SP1′, and asecond light conversion material layer CT2 is formed on the passivationlayer 3340 of the second sub-pixel region SP2′. The light conversioncharacteristics of the first and second light conversion material layersCT1 and CT2 are different. The first and second light conversionmaterial layers CT1 and CT2 are formed between second molds 3360. Inother words, regions in which the first and second light conversionmaterial layers CT1 and CT2 are formed may be defined (determined) bythe second mold 3360. The second mold 3360 may be regarded as apartition wall that prevents light interference between sub-pixelregions. The second mold 3360 may be located on the first mold 3350. Theblue light B emitted from the first micro LED 3300 mounted on the firstsub-pixel region SP1′ is emitted through the first light conversionmaterial layer CT1. The blue light B is converted into the red light Rwhile passing through the first light conversion material layer CT1. Tothis end, the first light conversion material layer CT1 may include amember or a material (e.g., particles, quantum dots) that converts theblue light B into the red light R. The blue light B emitted from thefirst micro LED 3300 transferred to the second sub-pixel region SP2′ isemitted through the second light conversion material layer CT2. In thisprocess, the blue light B is converted to the green light G whilepassing through the second light conversion material layer CT2. To thisend, the second light conversion material layer CT2 may include a memberor a material (e.g., particles, quantum dots) that converts the bluelight B into the green light G. In the light conversion process, lighttraveling in the lateral direction may be blocked by the second mold3360. Accordingly, interference between the light emitted from eachsub-pixel region SP1′, SP2′, and SP3′ may be prevented. In order toprevent such light interference, a light absorbing layer 3370 may beprovided between the second mold 3360 and the first and second lightconversion material layers CT1 and CT2, as indicated by a dotted line.

According to an embodiment, a method of transferring micro LEDs to apixel array panel of an LED display applies an inkjet printing method toaccurately transfer micro LEDs to each pixel region using an inkjethead. In this transfer process, one inkjet head or a plurality of inkjetheads may be used sequentially or simultaneously, and thus micro LEDsmay be sequentially or simultaneously transferred to a plurality ofpixel regions or a plurality of sub-pixel regions. Therefore, when themicro LED transfer method according to an embodiment as described aboveis used, the micro LED may be quickly and accurately transferred to thepixel region or sub-pixel region to which the micro LED is to betransferred, thereby improving the transfer efficiency. In addition,when the micro LED transfer method is used, the time taken to transferthe micro LED to the pixel array panel for a large area LED display mayalso be shortened. In addition, since the main layers constituting thetransferred micro LEDs form a core-shell structure, it is possible toprevent reduction in light emission efficiency due to the reduction inthe size of the LEDs.

It should be understood that embodiments described herein should beconsidered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within each embodimentshould typically be considered as available for other similar featuresor aspects in other embodiments. While one or more embodiments have beendescribed with reference to the figures, it will be understood by thoseof ordinary skill in the art that various changes in form and detailsmay be made therein without departing from the spirit and scope asdefined by the following claims.

What is claimed is:
 1. A method of transferring at least one micro lightemitting diode (LED) to a pixel array panel comprising a plurality ofsub-pixel regions on which the at least one micro LED is to be mounted,the method comprising: transferring the at least one micro LED, whereinthe at least one micro LED comprises an active layer comprising a firstportion emitting first light in a first direction and a second portionemitting second light in a second direction different from the firstdirection, wherein the transferring of the at least one micro LEDcomprises: dividing the plurality of sub-pixel regions into a pluralityof groups; and transferring a plurality of micro LEDs to each group fromamong the plurality of groups.
 2. The method of claim 1, wherein thetransferring of the plurality of micro LEDs comprises: sequentiallytransferring the plurality of micro LEDs to each group from among theplurality of groups, wherein the sequentially transferring of theplurality of micro LEDs comprises simultaneously transferring a selectedplurality of micro LEDs, from among the plurality of micro LEDs, tosub-pixel regions of a selected group from among the plurality ofgroups.
 3. The method of claim 2, wherein the simultaneouslytransferring of the selected plurality of micro LEDs comprisestransferring a micro LED emitting red light, green light, or blue lightto each sub-pixel region from among the sub-pixel regions of theselected group.
 4. The method of claim 1, wherein the pixel array panelis provided on a backplane of an LED display.
 5. The method of claim 2,wherein the sub-pixel regions of the selected group comprise a pluralityof red (R) sub-pixel regions, a plurality of green (G) sub-pixel regionsand a plurality of blue (B) sub-pixel regions to form a plurality ofpixels, wherein each pixel from among the plurality of pixels comprisesan R sub-pixel region from among the plurality of R sub-pixel regions, aG sub-pixel region from among the plurality of G sub-pixel regions, anda B sub-pixel region from among the plurality of B sub-pixel regions. 6.The method of claim 5, wherein the simultaneously transferring of theselected plurality of micro LEDs to the sub-pixel regions of theselected group comprises: transferring a first micro LED to each Rsub-pixel region from among the plurality of R sub-pixel regions;transferring a second micro LED to each G sub-pixel region from amongthe plurality of G sub-pixel regions; and transferring a third micro LEDto each B sub-pixel region from among the plurality of B sub-pixelregions.
 7. The method of claim 1, wherein the plurality of micro LEDsare transferred to each sub-pixel region from among the plurality ofsub-pixel regions.
 8. The method of claim 7, further comprising:removing a micro LED that is not correctly transferred from among theplurality of micro LEDs transferred to each sub-pixel region from amongthe plurality of sub-pixel regions; and transferring a same type ofmicro LED as a type of the correctly transferred micro LED to a positionfrom which the micro LED is removed.
 9. The method of claim 7, whereinbanks are provided between adjacent sub-pixel regions from among theplurality of sub-pixel regions.
 10. The method of claim 7, wherein eachof the sub-pixel regions is divided into a plurality of regions, andwherein the method further comprises transferring one micro LED fromamong the plurality of micro LEDs to each region from among theplurality of regions.
 11. The method of claim 10, wherein each regionfrom among the plurality of regions is defined by a mold for guiding thetransferred one micro LED.
 12. The method of claim 1, wherein the atleast one micro LED comprises a first semiconductor layer, the activelayer and a second semiconductor layer sequentially stacked to form acore-shell structure, and wherein the at least one micro LED comprises ahorizontal electrode micro LED.
 13. The method of claim 1 furthercomprising transferring a respective micro LED emitting a same colorlight to all of the plurality of sub-pixel regions.
 14. The method ofclaim 13, wherein the micro LEDs emitting the same color light emit ablue light.
 15. The method of claim 13, further comprising: forming afirst light conversion material layer on each respective micro LEDtransferred to an R sub-pixel region from among the plurality ofsub-pixel regions; and forming a second light conversion material layeron each respective micro LED transferred to a G sub-pixel region fromamong the plurality of sub-pixel regions.
 16. A method of transferringat least one micro LED to a pixel array panel comprising a plurality ofpixel regions, the method comprising: transferring a first micro LED toa first pixel region from among the plurality of pixel regions; andtransferring a second micro LED to a second pixel region from among theplurality of pixel regions, wherein each of the first micro LED and thesecond micro LED comprises an active layer comprising a first portionemitting first light in a first direction and a second portion emittingsecond light in a second direction different from the first direction,wherein the transferring of the first micro LED to the first pixelregion comprises: transferring a plurality of first micro LEDs to thefirst pixel region, and wherein the transferring of the plurality offirst micro LEDs to the first pixel region comprises: transferring afirst group of first micro LEDs from among the plurality of first microLEDs to a first sub-pixel region of the first pixel region; transferringa second group of first micro LEDs from among the plurality of firstmicro LEDs to a second sub-pixel region of the first pixel region; andtransferring a third group of first micro LEDs from among the pluralityof first micro LEDs to a third sub-pixel region of the first pixelregion.
 17. The method of claim 16, wherein the transferring of thefirst micro LED to the first pixel region and the transferring of thesecond micro LED to the second pixel region are performedsimultaneously.
 18. The method of claim 16, wherein the transferring ofthe first micro LED to the first pixel region and the transferring ofthe second micro LED to the second pixel region are performedsequentially.
 19. The method of claim 16, wherein a type of the firstmicro LED is the same as or different from that of the second micro LED.20. The method of claim 16, wherein a third micro LED is transferred toa remaining pixel region from among the plurality of pixel regions. 21.The method of claim 16, wherein each of the first micro LED and thesecond micro LED comprises a respective first semiconductor layer, therespective active layer and a respective second semiconductor layersequentially stacked to form a respective core-shell structure, andwherein each of the first micro LED and the second micro LED comprises ahorizontal electrode micro LED.
 22. The method of claim 16, wherein thetransferring of the first micro LED to the first pixel region comprises:spraying a solution in which micro LEDs are mixed to the first pixelregion.
 23. The method of claim 16, wherein the transferring of thefirst group, the transferring of the second group, and the transferringof the third group are simultaneously performed.
 24. The method of claim16, wherein the transferring of the first group, the transferring of thesecond group, and the transferring of the third group are sequentiallyperformed, wherein the method further comprises, after the transferringof the first group, removing a first micro LED of the first group thatis not correctly transferred; and transferring a same type of micro LEDas a type of a correctly transferred first micro LED to a position fromwhich the first micro LED is removed, and the removing and thetransferring of the same type of micro LED are performed after thetransferring of the second group and the transferring of the third groupare performed.
 25. The method of claim 16, wherein the first sub-pixelregion, the second sub-pixel region, and the third sub-pixel region areeach surrounded by a respective bank.
 26. The method of claim 16,wherein each of the first sub-pixel region, the second sub-pixel region,and the third sub-pixel region comprises a respective plurality ofregions, and wherein the method further comprises transferring one microLED from among the plurality of first micro LEDs to each region fromamong the plurality of regions.
 27. The method of claim 26, wherein eachregion from among the plurality of regions is defined by a mold forguiding the transferred one micro LED.
 28. A method of transferring atleast one micro LED to a pixel array panel comprising a plurality ofpixel regions, the method comprising: transferring a first micro LED toa first pixel region from among the plurality of pixel regions; andtransferring a second micro LED to a second pixel region from among theplurality of pixel regions, wherein each of the first micro LED and thesecond micro LED comprises an active layer comprising a first portionemitting first light in a first direction and a second portion emittingsecond light in a second direction different from the first direction,wherein the transferring of the second micro LED to the second pixelregion comprises: transferring a plurality of second micro LEDs to thesecond pixel region, wherein the transferring the plurality of secondmicro LEDs to the second pixel region comprises: transferring a firstgroup of second micro LEDs from among the plurality of second micro LEDsto a first sub-pixel region of the second pixel region; transferring asecond group of second micro LEDs from among the plurality of secondmicro LEDs to a second sub-pixel region of the second pixel region; andtransferring a third group of second micro LEDs from among the pluralityof second micro LEDs to a third sub-pixel region of the second pixelregion.
 29. The method of claim 28, wherein the transferring of thefirst group, the transferring of the second group, and the transferringof the third group are simultaneously performed.
 30. The method of claim28, wherein the transferring of the first group, the transferring of thesecond group, and the transferring of the third group are sequentiallyperformed, wherein the method further comprises, after the transferringof the first group, removing a second micro LED of the first group thatis not correctly transferred, and wherein the removing is performedafter the transferring of the second group and the transferring of thethird group are performed.
 31. The method of claim 28, wherein each ofthe first sub-pixel region, the second sub-pixel region, and the thirdsub-pixel region comprises a respective plurality of regions, andwherein the method further comprises transferring one micro LED fromamong the plurality of second micro LEDs to each region from among theplurality of regions.
 32. The method of claim 31, wherein each regionfrom among the plurality of regions is defined by a mold for guiding thetransferred one micro LED.